• Optical Amplifiers

Injection-locked amplifier (ILA)

  • 제품유형 Optical Amplifiers
  • 제품규격 Wavelength range : 370nm – 710nm
    Output power : 100mW to 1W, wavelength dependent
  • 브랜드 MOGLabs

Product Details

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Injection-Locked Amplifier(ILA)

 

MOGLabs ILA
 

 

The MOGLabs ILA injection-locked amplified laser system is a new approach to high power narrow linewidth tunable lasers. Higher power, up to 1W, is available at critical wavelengths without the need for complex and expensive frequency doubling cavities. 

 

The ILA uses new MOGLabs technology for stable injection locking of Fabry-Perot (FP) laser diodes. Injection locking has traditionally been plagued by extreme sensitivity to environmental drift: very small changes in temperature, alignment, or current can cause the amplifier diode to drift out of lock. 

 

We have developed an auto-tracking system that continually monitors the laser and makes tiny adjustments to the amplifier diode to maintain lock. The versatile platform offers many configurations; please contact MOGLabs for further information on this new cost-effective alternative.

 

Key wavelengths 

 

  • - 370 nm/100mW (Yb+) 
  • - 399nm/400mW (Yb) 
  • - 461nm/1000mW (Sr) 
  • - 509nm/200mW (Cs Rydberg) 
  • - 657nm/300mW (Ca clock) 
  • - 689nm/110mW (Sr MOT) 
  • - 698nm/110mW (Sr clock) 
  • - Many others; please enquire Power measured after isolator; includes seed

 

Features 

 

- Digital controller for amplifier 

  • - Low-cost amplifier diode replacement 
  • - Stable intuitive flexure alignment 
  • - Fibre options for seed and amplified beams

 

  • Options

  •  
  • - Multiple stage optical isolation
  • - Single-mode output fibre coupling
  • - Dual amplified output beam option (free-space plus fibre-coupled)
  • - Secondary free-space or fibre-coupled seed pickoff (e.g. for locking, monitoring of seed)
  • - Integrated beam-shaping to reduce astigmatism
  • - Compatible with MOGLabs LASRACK

 

Specification

 

Wavelength/Frequency

Wavelength370nm – 710nm, dependent on diode availability
Gain bandwidth5nm - 15nm, wavelength dependent
Power100mW to 1W, wavelength dependent
ASE suppression>45dB

 

Optical

Beam diameter (1/e²)Typically 1.8 x 3.0 mm, wavelength dependent
Beam qualityM² from 1.0 to 1.2
Beam divergence<1.5 mrad
PolarisationLinear 100:1

 

Thermal

TECSeed and amplifier: ±14V 3.3A Q = 34W standard
SensorNTC 10kΩ
CoolingQuick-fit water cooling, φ 6mm

 

Electronics

ProtectionRelay, reverse diode, photodiode cutout
IndicatorLaser ON/OFF (LED)
ConnectorsSeed: DVI-D DL; amplifier DE9 + DE15

 

Dimensions

Dimensions300 x155 x93mm (LxWxH)


 

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